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Silicon wafer is the carrier of solar cell, which is divided into monocrystalline silicon wafer and polycrystalline silicon wafer. The quality of wafer determines the cell’s’ efficiency directly.JY uses the world's most advanced slicing equipment, advanced diamond wire cutting technology to produce wafers, and also equipped with advanced testing machine to monitor wafer’s parameters,including surface conditions, lifetime,resistivity,conductive type and cracks.Our mission is to ensure the wafers are of the best quality.
Project | Technical Parameters | |
---|---|---|
Side length | 156.75±0.25mm | 156.75±0.25mm |
diameter | 210±0.25mm | 210±0.25mm |
thickness | 200±20µm | 180+20µm |
oxygen concentration | ≤0.8*1018atoms/cm³ | |
carbon concentration | ≤5*1016atoms/cm³ | |
Conductive model / dopant | P/Borom | |
Verticality | 90°±0.3° | |
Minority life | > 3µs (bare measurement),> 15µs (after passivation) | |
Resistivity | 1-3Ω·cm | |
TTV | ≤30µm | |
Growth method | CZ Straight Pull | |
Total thickness difference | ≤30µm | |
saw mark | ≤15µm | |
Arc width deviation | 12±0.5mm |
Project | Technical Parameters | ||
---|---|---|---|
Side length | 156.75±0.25mm | 157±0.25mm | 157.75±0.25mm |
diameter | 220.2±0.5mm | 220.5±1mm | 221.7±1mm |
thickness | 200±20µm | ||
oxygen concentration | ≤5*1017atoms/cm³ | ||
carbon concentration | ≤7*1017atoms/cm³ | ||
Conductive model / dopant | P/Borom | ||
Verticality | 90°±0.25° | ||
Minority life | ≥1µs (naked measurement) | ||
Resistivity | 1-3Ω·cm | ||
TTV | ≤30µm | ||
Growth method | DSS | ||
Total thickness difference | ≤30µm | ||
saw mark | ≤15µm | ||
hypotenuse | 0.5-2mm |